advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 40v ultra-low on-resistance r ds(on) 2.6m fast switching characteristic rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a 40 /w parameter 1 total power dissipation 3.12 storage temperature range operating junction temperature range -55 to 150 thermal data 45 maximum thermal resistance, junction-ambient (pcb mount) 5 total power dissipation 104 -55 to 150 gate-source voltage + 20 pulsed drain current 1 drain current, v gs @ 10v 4 130 drain current, v gs @ 10v 4 (silicon limited) drain current, v gs @ 10v parameter rating drain-source voltage 40 AP4N2R6S halogen-free product 201709011 400 150 95 g d s a p4604 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package. g d s a p4n2r6 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the low connection resistance. g d s to-263(s) .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 2.6 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =5v, i d =40a - 140 - s i dss drain-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 87 139 nc q gs gate-source charge v ds =32v - 20 - nc q gd gate-drain ("miller") charge v gs =10v - 23 - nc t d(on) turn-on delay time v ds =20v - 15 - ns t r rise time i d =40a - 63 - ns t d(off) turn-off delay time r g =1.6 -36- ns t f fall time v gs =10v - 12 - ns c iss input capacitance v gs =0v - 5100 8160 pf c oss output capacitance v ds =20v - 720 - pf c rss reverse transfer capacitance f=1.0mhz - 360 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.2 v t rr reverse recovery time i s =40a, v gs =0v - 16 - ns q rr reverse recovery charge di/dt=100a/s - 5.4 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =25v , l=0.1mh , r g =25 , v gs =10v 4.package limitation current is 130a . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP4N2R6S 5.surface mounted on 1 in 2 copper pad of fr4 board .
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP4N2R6S 0 100 200 300 400 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 40 80 120 160 200 01234 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 8.0v 7.0v 6.0v v g =5.0v t c =150 o c 0 4 8 12 16 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =40a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) i d =250ua .
AP4N2R6S fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12. transfer characteristics temperature 4 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2000 4000 6000 8000 1 1121314151 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =32v 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms dc operation in this area limited by r ds(on) 0 40 80 120 160 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) limited by package 0 40 80 120 160 200 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c .
ap4n2r6 s fig 13. typ. drain-source on state fig 14. total power dissipation resistance fig 15. normalized bv dss v.s. junction 5 0 4 8 12 16 20 0 20 40 60 80 100 120 i d , drain current (a) r ds(on) (m ) t j =25 o c v gs =10v 0 40 80 120 160 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma .
AP4N2R6S marking information 6 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 4n2r6 ywwsss .
|
